3.4 +0.3 -0.1 0.4 ? 0.1 |? 1 .5 ? 0.1 cathode indification for general purpose applications case:jedec mini-melf,glass ca se weight: approx 0.031 grams (ratings at 25 ambient temperature unless otherw ise specified) min. units 15 v na v pf k/w storage temperature range t stg reverse breakdown voltage @ i r =10 a symbols v r electrical characteristics i r termal resistance junction to ambient air 0.5 voltage range: 15 v current: 30 ma mini-melf ma ma value peak reverse voltage 15 30 symbols polarity: color band denotes cathode end junction tenperature forward continuous current absolute ratings(limiting values) v rrm i f i fsm units v fast switching and low logic level applications metal silicon schottky barrier device which is protected by a pn junction guard ring. the low forward voltage drop and fast switching make it ideal for protection of mos devices,steering,biasing and coupling diodes for r ja leakage current @ v r =6v junction capacitance @ v r =1.0v,f=1mhz forw ard voltage drop @ i f =1.0ma 400 1)valid provided that electrodes are kept at ambient temperature. surge non repetitive forward current tp?1s 100 60 i f =10ma v f c j max. ty p. 1.1 t j 0.38 c -55 ---+ 150 125 test pulse:tp?300m s, |??2% i f =30ma 1.0 dimensions in millimeters ll 45 small signal schottky diode s features m echani cal d ata http://www.luguang.cn mail:lge@luguang.cn
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